Flexible Solution-Processed Memristors

Published

June 3, 2009

Author(s)

Nadine E. Gergel-Hackett, Behrang H. Hamadani, B Dunlap, John S. Suehle, Curt A. Richter, Christina A. Hacker, David J. Gundlach

Abstract

We have fabricated physically flexible nonvolatile memory devices using inexpensive, room-temperature, solution processing. The behavior of these devices is consistent with that of a memristor device, the missing fourth circuit element theoretically proposed in the 1970s and recently demonstrated experimentally.[1,2,3] Memristor devices have the potential for use in memory and logic and are written and erased through charge-mediated changes to the device's resistive state. We fabricated flexible memristors with operation voltages of less than 10 V and on/off ratios greater than 10,000:1, which also exhibit memory potential that is nonvolatile for over 300 h and operational after 4,000 flexes. Our technology has potential advantages over existing flexible memory devices (including low power operation, rewritability, and a simple two-terminal room temperature processed device design) and correspondingly, has the potential to fill the large void in viable memory within the flexible electronics community. While organic field-effect transistors (FETs) have shown promise for use as flexible devices in logic,[4-6] the majority of flexible memory devices reported, write-once-read-many-times polymer devices[7-9] or three terminal polymer-based ferroelectric memory devices,[10-13] do not address the needs of a rewritable, low-power flexible memory device. Because the flexible TiO2 memory device developed have relatively low operation voltages (less than 10V) and are nonvolatile, these flexible memristors have the potential to serve as an inexpensive answer to the need for flexible memory components, increasing their applications, accessibility, and integration potentials.

Citation

IEEE Electron Device Letters

Volume

30

Issue

7

Pub Type

Journals

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Keywords

memristor, flexible electronics, sol gel, titanium dioxide, flexible memory, plastic substrate

Citation

Gergel-Hackett, N. , Hamadani, B. , Dunlap, B. , Suehle, J. , Richter, C. , Hacker, C. and Gundlach, D. (2009), Flexible Solution-Processed Memristors, IEEE Electron Device Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=900874 (Accessed April 18, 2024)