Liu, X.
, Zhang, W.
, Carter, M.
and Xiao, G.
(2011),
Ferromagnetic resonance and damping properties of CoFeB thin films as free layers in MgO-based magnetic tunnel junctions, Journal of Applied Physics (Accessed May 18, 2026)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Ferromagnetic resonance and damping properties of CoFeB thin films as free layers in MgO-based magnetic tunnel junctions
Published
Author(s)
, Wenzhe N. Zhang, Matthew J. Carter, Gang N. Xiao
Abstract
We have investigated the magnetization dynamics of sputtered Co_{40}Fe_{40}B_{20} thin films in a wide range of thickness used as free layers in MgO-based magnetic tunneling junctions, with the technique of broadband ferromagnetic resonance (FMR). We have observed a large interface-induced magnetic perpendicular anisotropy in the thin film limit. Out-of-plane angular dependency FMR measurement revealed the contributions of two different damping mechanisms to the FMR linewidth in thick and thin film limits, based on the analysis using Arias-Mills formula. In thinner films (4 nm). Lastly, we have observed an inverse scaling of Gilbert damping constant with film thickness. We explained this by spin pump effect and an intrinsic damping constant of 0.004 in the FeCoB alloy film is determined.Citation
Journal of Applied Physics
Pub Type
Journals
Keywords
CoFeB, damping, ferromagnetic resonance, magnetic tunnel junctions
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created August 18, 2011, Updated February 19, 2017