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Fabrication Strategies for Magnetic Tunnel Junctions With Magnetoelectric Applications



Philip Pong, Moshe Schmoueli, William F. Egelhoff Jr.


In this paper, two lithographic fabrication processes for magnetic tunnel junctions (MTJs) with different mask designs and etching technologies are discussed. The advantages and disadvantages of both processes are compared. The crucial steps to protect the oxide insulating barriers and avoid side-wall redepositions (which may lead to short circuits) are developed, and important design considerations of the mask patterns and the device geometric structures are elaborated. We show that implementing the strategies developed greatly increases the successful manufacturing yield of MTJ magnetoelectronics devices.


endpoint detection, fab rication, magnetic tunnel junction, spintronics, tunneling magnetoresistance


Pong, P. , Schmoueli, M. and Egelhoff Jr., W. (2008), Fabrication Strategies for Magnetic Tunnel Junctions With Magnetoelectric Applications, SPIE (Accessed April 19, 2024)
Created October 16, 2008