Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Fabrication Strategies for Magnetic Tunnel Junctions With Magnetoelectric Applications

Published

Author(s)

Philip Pong, Moshe Schmoueli, William F. Egelhoff Jr.

Abstract

In this paper, two lithographic fabrication processes for magnetic tunnel junctions (MTJs) with different mask designs and etching technologies are discussed. The advantages and disadvantages of both processes are compared. The crucial steps to protect the oxide insulating barriers and avoid side-wall redepositions (which may lead to short circuits) are developed, and important design considerations of the mask patterns and the device geometric structures are elaborated. We show that implementing the strategies developed greatly increases the successful manufacturing yield of MTJ magnetoelectronics devices.
Citation
SPIE

Keywords

endpoint detection, fab rication, magnetic tunnel junction, spintronics, tunneling magnetoresistance

Citation

Pong, P. , Schmoueli, M. and Egelhoff Jr., W. (2008), Fabrication Strategies for Magnetic Tunnel Junctions With Magnetoelectric Applications, SPIE (Accessed December 12, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 16, 2008