An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Fabrication Strategies for Magnetic Tunnel Junctions With Magnetoelectric Applications
Published
Author(s)
Philip Pong, Moshe Schmoueli, William F. Egelhoff Jr.
Abstract
In this paper, two lithographic fabrication processes for magnetic tunnel junctions (MTJs) with different mask designs and etching technologies are discussed. The advantages and disadvantages of both processes are compared. The crucial steps to protect the oxide insulating barriers and avoid side-wall redepositions (which may lead to short circuits) are developed, and important design considerations of the mask patterns and the device geometric structures are elaborated. We show that implementing the strategies developed greatly increases the successful manufacturing yield of MTJ magnetoelectronics devices.
Citation
SPIE
Pub Type
Journals
Keywords
endpoint detection, fab rication, magnetic tunnel junction, spintronics, tunneling magnetoresistance
Citation
Pong, P.
, Schmoueli, M.
and Egelhoff Jr., W.
(2008),
Fabrication Strategies for Magnetic Tunnel Junctions With Magnetoelectric Applications, SPIE
(Accessed April 26, 2024)