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Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics
Published
Author(s)
Nathan D. Orloff, C H. Lee, T Birol, J A. Mundy, V. Goian, R. Haislmaier, E. Vlahos, Y. Kim, J. D. Brock, Y Zhu, R. Uecker, V. Gopalan, S. Kamba, X X. Xi, D A. Muller, I. Takeuchi, James C. Booth, C. J. Fennie
Abstract
The miniaturization and integration of frequency-agile microwave circuitstunable filters, resonators, phase shifters and morewith microelectronics offers tantalizing device possibilities, yet requires thin films whose dielectric constant at GHz frequencies can be tuned by applying a quasi-static electric field 1. Appropriate systems, e.g., BaxSr1xTiO3, have a paraelectric-to- ferroelectric transition just below ambient temperature, providing high tunability 13, Unfortunately such films suffer significant losses arising from defects. Recognizing that progress is stymied by dielectric loss, we start with a system with exceptionally low loss Srn+1TinO3n+1 phases 4,5 where in-plane crystallographic shear 6,7 (SrO)2 faults provide an alternative to point defects for accommodating non-stoichiometry 8,9. Here, we report the experimental realization of the emergence of a ferroelectric and highly tunable ground state in biaxially strained Srn+1TinO3n+1 phases with n ≥ 3 at frequencies up to 40 GHz. With increasing n the (SrO)2 faults are separated further than the ferroelectric coherence length perpendicular to the in-plane polarization, enabling tunability with a figure of merit at room temperature that rivals all known tunable microwave dielectrics3.
Orloff, N.
, Lee, C.
, Birol, T.
, Mundy, J.
, Goian, V.
, Haislmaier, R.
, Vlahos, E.
, Kim, Y.
, Brock, J.
, Zhu, Y.
, Uecker, R.
, Gopalan, V.
, Kamba, S.
, Xi, X.
, Muller, D.
, Takeuchi, I.
, Booth, J.
and Fennie, C.
(2013),
Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics, Nature, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=913021
(Accessed October 8, 2025)