Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Experimental and Theoretical Evidence of Hydrogen Doping in Solution Processed Indium Gallium Oxide via Polymer Incorporation

Published

Author(s)

Wei Huang, Joshua Tedesco, Po-Hsiu Chien, Kyle McMillen, Li Zeng, Subhrangsu Mukherjee, Binghao Wang, Yao Chen, Gang Wang, Yang Wang, Yanshan Gao, Michael Bedzyk, Dean DeLongchamp, Julia E. Medvedeva, Yan-Yan Hu, Tobin Marks, Antonio Facchetti

Abstract

Aqueous solution processed high performance indium gallium oxide (IGO) thin-film transistors (TFTs) are realized by the simple addition of a hydroxyl (C-OH) containing polymer [polyvinyl alcohol (PVA)] into an IGO precursor solution. The field-effect mobility ($\mu$) of the neat IGO (In:Ga = 6:4 at. mol ratio) TFTs, which is only 0.10 cm2/Vs, increases to > 7 cm2/Vs upon optimal PVA addition in the precursor solution. The IGO-PVA film microstructure, composition, and energy levels are accessed through a combination of techniques including X-ray photoelectron spectroscopy, X-ray reflectivity, extended X-ray absorption fine structure, resonant soft X-ray scattering, ultraviolet photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and Fourier- transform infrared spectroscopy. These results, combined with theoretical calculations and solid-state nuclear magnetic resonance, suggest that PVA presence in the IGO solution precursor leads to optimal hydrogen doping in IGO films, suppressing the localization of deep trap defects and reducing electron scattering, thus providing higher mobilities. This work proposes a completely new route to achieve efficient hydrogen doping in solution processed MOs and holds the potential for the fabrication of high-performance and ultra-stable metal oxide semiconductors with simpler atomic compositions and processed from solution with green solvents.
Citation
PNAS

Citation

Huang, W. , Tedesco, J. , Chien, P. , McMillen, K. , Zeng, L. , Mukherjee, S. , Wang, B. , Chen, Y. , Wang, G. , Wang, Y. , Gao, Y. , Bedzyk, M. , DeLongchamp, D. , Medvedeva, J. , Hu, Y. , Marks, T. and Facchetti, A. (2020), Experimental and Theoretical Evidence of Hydrogen Doping in Solution Processed Indium Gallium Oxide via Polymer Incorporation, PNAS, [online], https://doi.org/10.1073/pnas.2007897117 (Accessed June 24, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created July 23, 2020, Updated March 5, 2023