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Ex-situ Characterization of InGaAsP

Published

Author(s)

Alexana Roshko, Kristine A. Bertness

Abstract

An interlaboratory comparison was undertaken to assess differences in X-ray and photoluminescence measurements from different laboratories. Six InGaAsP specimens, with nominal photoluminescence peak wavelengths of 1.1, 1.3 and 1.5 υm, were measured. Lateral nonuniformity in the specimens dominated the variation in the X-ray measurements. In contrast, the variation among photoluminescence measurements was larger than the variation within individual specimens and allowed differences between measurements to be assessed. Offsets between different instruments were identified, however correlations with variables such as pump wavelength, wavelength calibration, sample temperature, pump power density, and peak identification, as reported by the different laboratories, were not observed.
Proceedings Title
Tech. Dig., CS-MAX 2002, Compound Semiconductor Mfg. Expo
Conference Dates
November 11-13, 2002
Conference Location
San Jose, CA

Keywords

characterization, ex-situ characterization, InGaAsP, interlaboratory comparison, photoluminescence, PL, X-ray diffraction, XRD

Citation

Roshko, A. and Bertness, K. (2002), Ex-situ Characterization of InGaAsP, Tech. Dig., CS-MAX 2002, Compound Semiconductor Mfg. Expo, San Jose, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30851 (Accessed February 27, 2024)
Created November 11, 2002, Updated February 19, 2017