Epitaxial Graphene Electronic Structure And Transport

Published

September 2, 2010

Author(s)

Joseph A. Stroscio, Walt A. de Heer, Claire Berger, Xiaosong Wu, Yike Hu, Ming Ruan, Phillip First, Robert Haddon, Benjamin Piot, Clement Faugeras, Marek Potemski

Abstract

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure, and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analog epitaxial graphene amplifiers.

Citation

Journal of Physics D-Applied Physics

Volume

43

Issue

37

Pub Type

Journals

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Keywords

graphene, electronics, carbon

Citation

Stroscio, J. , de, W. , Berger, C. , Wu, X. , Hu, Y. , Ruan, M. , , P. , Haddon, R. , Piot, B. , Faugeras, C. and Potemski, M. (2010), Epitaxial Graphene Electronic Structure And Transport, Journal of Physics D-Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905039 (Accessed October 7, 2025)