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Enhanced Thermoelectric Properties for Cu2ZnSnSe4 with Ga-doping

Published

Author(s)

Kaya Wei, Laura Beauchemin, Hsin Wang, Joshua B. Martin, George S. Nolas

Abstract

Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu have been synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, ρ, and Seebeck coefficient, S, for these materials decrease with increasing Ga doping; both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increase with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity, suggesting another approach to achieving optimized thermoelectric properties. This work is part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.
Citation
Journal of Alloys and Compounds

Keywords

quaternary chalcogenides, thermoelectric properties, gallium doping

Citation

Wei, K. , Beauchemin, L. , Wang, H. , Martin, J. and Nolas, G. (2015), Enhanced Thermoelectric Properties for Cu2ZnSnSe4 with Ga-doping, Journal of Alloys and Compounds, [online], https://doi.org/10.1016/j.jallcom.2015.08.046 (Accessed April 22, 2024)
Created August 22, 2015, Updated October 12, 2022