Enhanced Thermoelectric Properties for Cu2ZnSnSe4 with Ga-doping

Published

August 22, 2015

Author(s)

Kaya Wei, Laura Beauchemin, Hsin Wang, Joshua Martin, George S. Nolas

Abstract

Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu have been synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, ρ, and Seebeck coefficient, S, for these materials decrease with increasing Ga doping; both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increase with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity, suggesting another approach to achieving optimized thermoelectric properties. This work is part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.

Citation

Journal of Alloys and Compounds

Pub Type

Journals

Download Paper

https://doi.org/10.1016/j.jallcom.2015.08.046

Local Download

Keywords

quaternary chalcogenides, thermoelectric properties, gallium doping

Citation

Wei, K. , Beauchemin, L. , Wang, H. , Martin, J. and Nolas, G. (2015), Enhanced Thermoelectric Properties for Cu2ZnSnSe4 with Ga-doping, Journal of Alloys and Compounds, [online], https://doi.org/10.1016/j.jallcom.2015.08.046, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=918614 (Accessed October 9, 2025)