Enhanced carrier transport along edges of graphene devices

Published

March 20, 2012

Author(s)

Jungseok Chae, Suyong S. Jung, Sungjong Woo, Hongwoo Baek, Jeonghoon Ha, Young J. Song, Young-Woo Son, Nikolai Zhitenev, Joseph A. Stroscio, Young Kuk

Abstract

The relation between the macroscopic charge transport properties and the microscopic carrier distribution inside conducting channels is one of the central issues in physics and future applications of graphene devices (GDs). With scanning gate microscopy (SGM) - a powerful experimental tool to probe the transport properties of a device through local gating, we find strong local charge accumulation at the edges of a GD. At high carrier densities, SGM signals are an order of magnitude larger at the edges of GDs than inside the bulk channel. We developed a theoretical model relating the conductance enhancement observed at the edges of GDs to the opening of an additional conduction channel. The channel is induced by the band bending of graphene edge states caused and controlled by the edge-charge accumulation and the local tip-gating effect.

Citation

Nano Letters

Volume

12

Issue

4

Pub Type

Journals

Download Paper

Local Download

Keywords

graphene, scanning gate microscopy, atomic force microscopy

Citation

Chae, J. , Jung, S. , Woo, S. , Baek, H. , Ha, J. , Song, Y. , Son, Y. , Zhitenev, N. , Stroscio, J. and Kuk, Y. (2012), Enhanced carrier transport along edges of graphene devices, Nano Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=906187 (Accessed October 27, 2025)