Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electron Doping BaZrO3 via Topochemical Reduction

Published

Author(s)

Thomas Orvis, Mythili Surendran, Yang Liu, Shanyuan Niu, Shinichiro Muramoto, Alexander Grutter, Jayakanth Ravichandran

Abstract

We report the topochemical reduction of epitaxial thin films of the cubic perovskite BaZrO3. Reduction with calcium hydride yields n-type conductivity in the films, despite the wide bandgap and low electron affinity of the parent material. X-ray diffraction studies show concurrent loss of out-of-plane texture with stronger reducing conditions. Temperature dependent transport studies on reduced films show insulation behavior (decreasing resistivity with increasing temperature) with a combination of thermally activated and variable range hopping transport mechanisms. Time-dependent conductivity studies show that the films are stable over short periods, with chemical changes over the course of weeks leading to an increase in electrical resistance. Neutron reflectivity and secondary ion mass spectrometry indicate the source of the carriers is most likely hydrogen incorporated from the reducing agent occupying oxygen vacancies and/or interstitial sites. Our studies introduce topochemical reduction as a viable pathway to electron dope and meta0stabilize low electron affinity and work function materials.
Citation
ACS Applied Materials and Interfaces
Volume
11
Issue
24

Keywords

Perovskite, Oxide, Reduction, Thin Film, Doping

Citation

Orvis, T. , Surendran, M. , Liu, Y. , Niu, S. , Muramoto, S. , Grutter, A. and Ravichandran, J. (2019), Electron Doping BaZrO<sub>3</sub> via Topochemical Reduction, ACS Applied Materials and Interfaces, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=927878 (Accessed April 23, 2024)
Created June 18, 2019, Updated October 12, 2021