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Electron Beam Induced X-Ray Emission: An In Situ Probe for Composition Determination During Molecular Beam Epitaxy Growth

Published

Author(s)

Joseph G. Pellegrino, J T. Armstrong, J R. Lowney, B. Dicamillo, J C. Woicik

Abstract

An in situ, x-ray emission measurement technique is developed. This technique is demonstrated to measure composition at the monolayer level for the InGAAs/GaAs heterojunction system. This electron beam induced x-ray emission technique is a powerful method for in situ compositional analysis during molecular beam epitaxy (MBE) growth. Unlike the reflection high-energy electron diffraction (RHEED) method, this electron beam stimulated x-ray emission technique affords a new method for the real-time monitoring of the elmental composition while the sample is rotating during growth. The technique exhibits long term reproducibility, and in addition, compares reasonably well with RHEED. Well-characterized standards are required for quantitative analysis of the composition, and knowledge about the electron sampling trajectories is required for accurate elemental analysis at the monolayer level.
Citation
Applied Physics Letters
Volume
73
Issue
24

Keywords

elemental composition, in-situ, MBE, X-ray emission

Citation

Pellegrino, J. , Armstrong, J. , Lowney, J. , Dicamillo, B. and Woicik, J. (1998), Electron Beam Induced X-Ray Emission: An In Situ Probe for Composition Determination During Molecular Beam Epitaxy Growth, Applied Physics Letters (Accessed March 5, 2024)
Created November 30, 1998, Updated October 12, 2021