Electron beam induced current in the high injection regime

Published: July 02, 2015

Author(s)

Paul M. Haney, Heayoung Yoon, Prakash Koirala, Robert W. Collins, Nikolai B. Zhitenev

Abstract

Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of electron-hole pairs, which may drive the system into nonlinear regimes. An analytic model is presented which describes the material response when the total electron-hole pair generation rate exceeds the rate at which carriers are extracted by the photovoltaic cell, and charge accumulation and screening occur. The model provides a simple estimate of the onset of high injection in terms of the material resistivity and thickness, and provides a straightforward way to predict the EBIC lineshape in the high injection regime. The model is verified by comparing its predictions to numerical simulations in 1 and 2 dimensions. Features of the experimental data, such as the magnitude and position of maximum collection efficiency versus electron beam current, are consistent with the 3 dimensional model.
Citation: Nanotechnology
Volume: 26
Issue: 29
Pub Type: Journals
Created July 02, 2015, Updated November 10, 2018