Electrical Properties of Nb-MoSi2-Nb Josephson Junctions

Published

June 6, 2005

Author(s)

Yonuk Chong, Paul Dresselhaus, Samuel Benz

Abstract

We present a detailed study of the electrical properties of planar Nb-MoSi2-Nb Josephson junctions. The Nb-MoSi2-Nb junction is an excellent system to study proximity-coupling in junctions with rigid superconductor/normal metal boundaries by controlling the barrier thickness and the temperature precisely and independently. With regard to applications, the Josephson properties are very reproducible, and the characteristic voltage can be tuned easily over more than two orders of magnitude while still maintaining a practical critical current density. The characteristic voltage is shown to be well-controlled at 4 K, with an exponential dependence on the barrier thickness. The temperature dependence of the critical current density fits well to the proximity-coupled junction theory, allowing us to quantitatively extract material parameters.

Citation

Applied Physics Letters

Pub Type

Journals

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Keywords

Josephson junction, Molybdenium disilicide, Proximity effect, Voltage standard

Citation

Chong, Y. , Dresselhaus, P. and Benz, S. (2005), Electrical Properties of Nb-MoSi2-Nb Josephson Junctions, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31899 (Accessed May 8, 2026)

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