Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electrical Properties of Nb-MoSi2-Nb Josephson Junctions

Published

Author(s)

Yonuk Chong, Paul Dresselhaus, Samuel Benz

Abstract

We present a detailed study of the electrical properties of planar Nb-MoSi2-Nb Josephson junctions. The Nb-MoSi2-Nb junction is an excellent system to study proximity-coupling in junctions with rigid superconductor/normal metal boundaries by controlling the barrier thickness and the temperature precisely and independently. With regard to applications, the Josephson properties are very reproducible, and the characteristic voltage can be tuned easily over more than two orders of magnitude while still maintaining a practical critical current density. The characteristic voltage is shown to be well-controlled at 4 K, with an exponential dependence on the barrier thickness. The temperature dependence of the critical current density fits well to the proximity-coupled junction theory, allowing us to quantitatively extract material parameters.
Citation
Applied Physics Letters

Keywords

Josephson junction, Molybdenium disilicide, Proximity effect, Voltage standard

Citation

Chong, Y. , Dresselhaus, P. and Benz, S. (2005), Electrical Properties of Nb-MoSi2-Nb Josephson Junctions, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31899 (Accessed April 15, 2024)
Created June 5, 2005, Updated October 12, 2021