We used azimuthally-resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line edge roughness (LER). Grating profiles were determined from multiple azimuthal configurations, focusing the incident beam into a 60 µm spot. We used rigorous numerical modeling, taking into account the finite numerical aperture and determining the profile shape using a four trapezoid model for the line profile. Data obtained from the perturbed and unperturbed gratings were fit using the same model, and the resulting root-mean-square error (RMSE) values were compared. The comparison shows an increase in RMSE values for the perturbed grating that can be attributed to the effects of LER.
Frontiers of Characterization and Metrology for Nanoelectronics 2011
, Germer, T.
and Bergner, B.
Effects of Roughness on Scatterometry Signatures, Frontiers of Characterization and Metrology for Nanoelectronics 2011, Grenoble, FR, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908805
(Accessed October 3, 2023)