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Effects of Roughness on Scatterometry Signatures

Published

Author(s)

Martin Foldyna, Thomas Germer, Brent Bergner

Abstract

We used azimuthally-resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line edge roughness (LER). Grating profiles were determined from multiple azimuthal configurations, focusing the incident beam into a 60 µm spot. We used rigorous numerical modeling, taking into account the finite numerical aperture and determining the profile shape using a four trapezoid model for the line profile. Data obtained from the perturbed and unperturbed gratings were fit using the same model, and the resulting root-mean-square error (RMSE) values were compared. The comparison shows an increase in RMSE values for the perturbed grating that can be attributed to the effects of LER.
Proceedings Title
Frontiers of Characterization and Metrology for Nanoelectronics 2011
Volume
1395
Conference Dates
May 24-26, 2011
Conference Location
Grenoble, FR

Keywords

Diffraction grating, Ellipsometry, Line edge roughness, Mueller matrix, Multi-azimuth method

Citation

Foldyna, M. , Germer, T. and Bergner, B. (2011), Effects of Roughness on Scatterometry Signatures, Frontiers of Characterization and Metrology for Nanoelectronics 2011, Grenoble, FR, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908805 (Accessed April 14, 2024)
Created May 25, 2011, Updated October 12, 2021