Effects of Humidity on Unencapsulated Poly(thiophene) Thin Film Transistors
Michael L. Chabinyc, Fred Endicott, B D. Vogt, Dean DeLongchamp, Eric K. Lin, Yiliang Wu, Ping Liu, Beng S. Ong
The effects of humidity on unencapsulated polymeric thin-film transistors (TFTs) were investigated. TFTs were fabricated on glass substrates with inorganic gate dielectric and a semiconducting layer of poly[5,5 -bis(3-dodecyl-2-thienyl)-2,2 -bithiophene], PQT-12. The field effect mobility of PQT-12 TFTs decreases and the rate of trapping of charge carriers increases under increasing humidity. The amount of water absorbed by the PQT-12 films was measured using a quartz crystal microbalance. Thin films of PQT-12 absorb comparable amounts of water to the carrier concentration in TFTs under routine operating conditions (humidity of 30% R.H. and gate voltage of -30 V); the changes in electrical characteristics under humid atmospheres are attributed to the interaction of absorbed water with the carriers in the film.
, Endicott, F.
, Vogt, B.
, DeLongchamp, D.
, Lin, E.
, Wu, Y.
, Liu, P.
and Ong, B.
Effects of Humidity on Unencapsulated Poly(thiophene) Thin Film Transistors, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852577
(Accessed December 10, 2023)