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Edge-state Transport in Graphene p-n Junctions in the Quantum Hall Regime

Published

Author(s)

Nikolai Klimov, Son T. Le, Jun Yan, Pratik Agnihotri, Everett Comfort, Ji Ung Lee, David B. Newell, Curt A. Richter

Abstract

We experimentally investigate charge carrier transport in a graphene p-n junction device by using independent p-type and n-type electrostatic gating which allow full characterization of the junction interface in the quantum Hall regime covering a wide range of filling factors [(v1, v2) ≤ 10]. Recent charge transport measurements across a graphene p-n junction in this quantized regime presume that equilibration of all of the Landauer-Büttiker edge states occurs across the p n junction interface. Here we show that, in our devices, only the edge state associated with the lowest Landau level fully equilibrate across the p-n junction, while none of the other edge states equilibrate to transmit current across the junction.
Citation
Physical Review Letters

Keywords

quantum Hall, graphene, nanoelectronics, p-n junction, charge transport

Citation

Klimov, N. , Le, S. , Yan, J. , Agnihotri, P. , Comfort, E. , Lee, J. , Newell, D. and Richter, C. (2015), Edge-state Transport in Graphene p-n Junctions in the Quantum Hall Regime, Physical Review Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917651 (Accessed April 15, 2024)
Created December 6, 2015, Updated October 12, 2021