Klimov, N.
, Le, S.
, Yan, J.
, Agnihotri, P.
, Comfort, E.
, Lee, J.
, Newell, D.
and Richter, C.
(2015),
Edge-state Transport in Graphene p-n Junctions in the Quantum Hall Regime, Physical Review Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917651
(Accessed December 14, 2024)
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Edge-state Transport in Graphene p-n Junctions in the Quantum Hall Regime
Published
Author(s)
, , Jun Yan, Pratik Agnihotri, Everett Comfort, Ji Ung Lee, ,
Abstract
We experimentally investigate charge carrier transport in a graphene p-n junction device by using independent p-type and n-type electrostatic gating which allow full characterization of the junction interface in the quantum Hall regime covering a wide range of filling factors [(v1, v2) ≤ 10]. Recent charge transport measurements across a graphene p-n junction in this quantized regime presume that equilibration of all of the Landauer-Büttiker edge states occurs across the p n junction interface. Here we show that, in our devices, only the edge state associated with the lowest Landau level fully equilibrate across the p-n junction, while none of the other edge states equilibrate to transmit current across the junction.Citation
Physical Review Letters
Pub Type
Journals
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Keywords
quantum Hall, graphene, nanoelectronics, p-n junction, charge transport
Citation
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Created December 6, 2015, Updated October 12, 2021