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Dysprosium Iron Garnet Thin Films with Perpendicular Magnetic Anisotropy on Silicon

Published

Author(s)

Jackson J. Bauer, Ethan R. Rosenberg, Subhajit Kundu, K. Andre Mkhoyan, Patrick A. Quarterman, Alexander J Grutter, Brian J Kirby, Julie A. Borchers, Caroline A. Ross

Abstract

Magnetic insulators, such as the rare-earth iron garnets, are promising materials for energy-efficient spintronic memory and logic devices, and their anisotropy, magnetization and other properties can be tuned over a wide range through selection of the rare-earth ion. Films are typically grown as epitaxial single crystals on garnet substrates, but integration of these materials with conventional electronic devices requires growth on Si. This article reports the growth, magnetic and spin transport properties of polycrystalline films of dysprosium iron garnet (DyIG) with perpendicular magnetic anisotropy (PMA) on Si substrates and as single crystal films on garnet substrates. PMA originates from magnetoelastic anisotropy and is obtained by controlling the strain state of the film through lattice mismatch or thermal expansion mismatch with the substrates. DiIG/Si exhibits large grain sizes and bulk-like magnetization and compensation temperature. Polarized neutron reflectometry demonstrates a small interfacial region near the substrate. Spin Hall magnetoresistance measurements conducted on a Pt/DyIG/Si heterostructure demonstrate a large interfacial spin mixing conductance between the Pt and DyIG comparable to other REIG/Pt heterostructures.
Citation
Advanced Electronic Materials
Volume
6
Issue
1

Keywords

Spintronics, Garnet, Film, Magnetism, Magnetic Insulator

Citation

, J. , , E. , Kundu, S. , , K. , Quarterman, P. , , A. , , B. , Borchers, J. and , C. (2020), Dysprosium Iron Garnet Thin Films with Perpendicular Magnetic Anisotropy on Silicon, Advanced Electronic Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=928660 (Accessed July 31, 2021)
Created December 31, 2019, Updated August 26, 2020