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Dynamical Screening at the Metal-semiconductor Interface and Excitonic Superconductivity

Published

Author(s)

Oleg Zakharov, Marvin Cohen, Steven G. Louie, David R. Penn

Abstract

We examine the possibility of excitonic superconductivity at a metal-semiconductor interface. An ab initio RPA calculation of the screened Coulomb electron-electron interaction is performed for the silicon-jellium multilayer model. The superconducting kernel for this multilayered system is found to be positive in the whole frequency range considered. We show that the inclusion of local field effects does not change the sign of the kernel and thus does not enhance the excitonic mechanism.
Citation
Journal of Physics-Condensed Matter
Volume
9

Citation

Zakharov, O. , Cohen, M. , Louie, S. and Penn, D. (1997), Dynamical Screening at the Metal-semiconductor Interface and Excitonic Superconductivity, Journal of Physics-Condensed Matter (Accessed June 17, 2024)

Issues

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Created March 26, 1997, Updated October 12, 2021