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Direct Measurement of Valence-Charge Asymmetry by X-Ray Standing Waves

Published

Author(s)

Joseph C. Woicik, E Nelson, P Pianetta

Abstract

By detecting valence-photoelectron under condition of strong x-ray Bragg reflection, we have determined that a majority of GaAs valence charge resides on the anion sites of this heteropolar crystal, in quantitative agreement with the Ga-As bond polarity as calculated from the Hartree-Fock term values. In contrast, the valence charge distribution in GE is found to be symmetric. In both cases, the valence emission is found to be closely coupled to the atomic cores.
Citation
Physical Review Letters
Volume
24
Issue
No. 4

Keywords

Bragg reflection, GaAs, valence-charge

Citation

Woicik, J. , Nelson, E. and Pianetta, P. (2000), Direct Measurement of Valence-Charge Asymmetry by X-Ray Standing Waves, Physical Review Letters (Accessed March 1, 2024)
Created January 1, 2000, Updated February 19, 2017