Direct Correlation of Organic Semiconductor Film Structure to Field-Effect Mobility

Published

August 1, 2005

Author(s)

Dean M. DeLongchamp, S Sambasivan, Daniel A. Fischer, Eric K. Lin, Paul C. Chang, A R. Murphy, J M. Frechet, V Subramanian

Abstract

Recent efforts towards the large-scale adoption of organic electronics have focused on maximizing device performance using new molecular designs and processing strategies. However, rational design and systematic progress are hindered by insufficient correlations between organic semiconductor film structure and field effect mobility. A particularly difficult challenge is the quantification of chemical conversion and concurrent molecular rearrangement in organic semiconductor precursor films. We demonstrate the use of near-edge x-ray absorption fine structure (NEXAFS) spectroscopy as a nondestructive technique to quantify the simultaneous chemical conversion, molecular ordering, and defect formation of soluble oligothiophene precursor films for application in organic field effect transistors. Variations in field-effect hole mobility with thermal processing are directly correlated to the orientation and distribution of molecules within 3 nm to 20 nm thick films.

Citation

Advanced Materials

Volume

17

Pub Type

Journals

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Keywords

NEXAFS, oligothiophene, organic electronics, sexithiophene, x-ray absorption spectroscopy

Citation

DeLongchamp, D. , Sambasivan, S. , Fischer, D. , Lin, E. , Chang, P. , Murphy, A. , Frechet, J. and Subramanian, V. (2005), Direct Correlation of Organic Semiconductor Film Structure to Field-Effect Mobility, Advanced Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852480 (Accessed October 10, 2025)