Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Development of a combinatorial characterization scheme for high-throughput investigations of hydrogen storage materials.

Published

Author(s)

Jason Hattrick-Simpers, Z. Tan, H. Oguchi, Chun Chiu, Edwin J. Heilweil, James E. Maslar, Leonid A. Bendersky

Abstract

In order to reliably increase the throughput of materials measured for hydrogen storage properties, a complete high-throughput characterization scheme has been developed that accurately measures the hydrogen storage properties of materials in quantities ranging from 10 nanogram to 1 g. Initial identification of promising materials is realized by rapidly screening thin-film composition spread and thickness wedge samples using normalized IR emissivity imaging. The hydrogen storage properties of promising samples are confirmed through measurements on single composition films with a high sensitivity (resolution < 0.3 ug) Sievert's type apparatus. For selected samples, larger quantities of up to 100 mg may be prepared and their (de)hydrogenation/micro-structural properties probed via parallel in situ Raman spectroscopy. Final confirmation of the hydrogen storage properties of a sample are obtained on 1 g powder quantities utilizing a combined Raman spectroscopy/Sievert's apparatus.
Citation
Science and Technology of Advanced Materials
Volume
12
Issue
5

Keywords

high-throughput, hydrogen storage, spectroscopy

Citation

Hattrick-Simpers, J. , Tan, Z. , Oguchi, H. , Chiu, C. , Heilweil, E. , Maslar, J. and Bendersky, L. (2011), Development of a combinatorial characterization scheme for high-throughput investigations of hydrogen storage materials., Science and Technology of Advanced Materials, [online], https://doi.org/10.1088/1468-6996/12/5/054207, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=909712 (Accessed December 3, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 15, 2011, Updated October 12, 2021