Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Determining the Planar Nernst Effect From Magnetic Field Dependent Thermopower and Resistance in Nickel and Permalloy Thin Films

Published

Author(s)

Azure Avery, Matthew Pufall, Barry L. Zink

Abstract

We present magnetic eld dependent measurements of thermopower, α(H), and resistance, R(H), for Ni80Fe20 and Ni thin films. We conducted these experiments in fields oriented parallel and perpendicular to the applied thermal gradient, gradient}T, for α(H) and applied current for R(H). We deposited the 20 nm thick lms on 500 nm thick suspended Si-N thermal isolation platforms that enable in-plane measurements of thermal and electrical properties of thin films. Both α(H) and R(H) in Ni-Fe and Ni films exhibit evidence of spin-dependent scattering through an even field dependence and a linear proportionality between α(H) and 1/R(H). Finally, we use αHparellel} and αHperpendicular to determine the planar Nernst coefficient in Ni-Fe and Ni thin films, and use this coefficient to predict the size of the planar Nernst effect (PNE) in the micromachined platform. The measured field dependence of the PNE is well matched by the prediction obtained from our α(H) results.
Citation
Physical Review B
Volume
86
Issue
18

Keywords

thermopower, magnetothermopower, thin films, magnetism

Citation

Avery, A. , Pufall, M. and Zink, B. (2012), Determining the Planar Nernst Effect From Magnetic Field Dependent Thermopower and Resistance in Nickel and Permalloy Thin Films, Physical Review B, [online], https://doi.org/10.1103/PhysRevB.86.184408 (Accessed April 18, 2024)
Created November 7, 2012, Updated October 12, 2021