Desorption of Arsenic Species During the Surfactant Enhanced Growth of Ge on Si (100)

Published

June 1, 2002

Author(s)

C L. Berrie, S R. Leone

Abstract

The desorption and scattering of As₄ and As₂ species from the surface during the growth of germanium films on Si(100) with continuous As₄deposition is monitored using laser ionizatin time-of-flight mass spectrometry. A significant increase in the flux of As₂ from the surface is oberved when the Ge flux is admitted to the surface. Upon discontinuation of the germanium growth process, the As₄ and As₂ signal levels remains at this increased level. A comprehensive study of the desorption fluxes of As₄, As₂, and As species from both Ge(100) and Si(100) substrates was performed as a function of substrate temperature and incident As₄ flux to determine the kinetics of desorption of the different species from the substrates. The behavior of the As₂ desorbed fluxes as a function fo surface temperature is qualitatively different on the Ge(100) and Si(100) substrates. The results indicate that the catalytic cracking of As₄ to As₂ is more effective on Ge (100) compared to Si(100) at substrate temperatures between 800 and 1000 K, most likely because fo more rapid desorption of As₂ at a given temperature on Ge(100). A phenomenological activation energy for the desorption of As atoms from Ge(100) of 1.2 0.4 eV is also obtained. The implications for the surfacactant enhanced growth of Ge on Si(100) are discussed.

Citation

Journal of Physical Chemistry B

Volume

106

Issue

No. 25

Pub Type

Journals

Keywords

arsenic desorption, germanium thin films, Si(100)

Citation

Berrie, C. and Leone, S. (2002), Desorption of Arsenic Species During the Surfactant Enhanced Growth of Ge on Si (100), Journal of Physical Chemistry B (Accessed July 26, 2024)