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Demonstration of a dressed-state phase gate for trapped ions



Ting Rei Tan, John P. Gaebler, Ryan S. Bowler, Yiheng Lin, John D. Jost, Dietrich G. Leibfried, David J. Wineland


We demonstrate a trapped ion entangling gate scheme proposed by Bermudez et~al [Phys. Rev. A 85, 040302 (2012)]. Simultaneous excitation of a strong carrier and a single sideband transition enables deterministic creation of entangled states. The method works for magnetic field-insensitive states, is robust against thermal excitations, includes dynamical decoupling from qubit dephasing errors, and provides simplifications in experimental implementation compared to some other entangling gates with trapped ions. We achieve a Bell state fidelity of 0.974(4) and identify the main sources of error.
Physical Review Letters


dynamical decoupling, trapped ions, quantum information processing, quantum entangling gate


, T. , Gaebler, J. , Bowler, R. , Lin, Y. , Jost, J. , Leibfried, D. and Wineland, D. (2013), Demonstration of a dressed-state phase gate for trapped ions, Physical Review Letters, [online], (Accessed February 23, 2024)
Created June 28, 2013, Updated February 19, 2017