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Demonstration of a dressed-state phase gate for trapped ions

Published

Author(s)

Ting Rei Tan, John P. Gaebler, Ryan S. Bowler, Yiheng Lin, John D. Jost, Dietrich G. Leibfried, David J. Wineland

Abstract

We demonstrate a trapped ion entangling gate scheme proposed by Bermudez et~al [Phys. Rev. A 85, 040302 (2012)]. Simultaneous excitation of a strong carrier and a single sideband transition enables deterministic creation of entangled states. The method works for magnetic field-insensitive states, is robust against thermal excitations, includes dynamical decoupling from qubit dephasing errors, and provides simplifications in experimental implementation compared to some other entangling gates with trapped ions. We achieve a Bell state fidelity of 0.974(4) and identify the main sources of error.
Citation
Physical Review Letters
Volume
110

Keywords

dynamical decoupling, trapped ions, quantum information processing, quantum entangling gate

Citation

, T. , Gaebler, J. , Bowler, R. , Lin, Y. , Jost, J. , Leibfried, D. and Wineland, D. (2013), Demonstration of a dressed-state phase gate for trapped ions, Physical Review Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=913171 (Accessed October 28, 2021)
Created June 28, 2013, Updated February 19, 2017