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PUBLICATIONS

Defect-Related Lattice Strain and the Transition Temperature in Ferroelectric Thin Films

Published

Author(s)

Davor Balzar

Abstract

We propose an extension to the phenomenological thermodynamic Landau-Ginzburg-Devonshire theory to include the contribution of inhomogeneous strains caused by lattice defects to the Gibbs free energy. The model yields correction terms for dielectric and ferroelectric quantities as a function of both elastic misfit strain and defect-related strain that can be measured by x-ray diffraction techniques. We compare the correction in Curie-Weiss temperature due to elastic and inhomogeneous strain in pristine, W and Mn 1 % doped Ba0.6Sr0.4TiO3 thin films grown on the LaAlO3 substrate. If the contribution of inhomogeneous strain is included, the agreement with measurements markedly improves.
Citation
Applied Physics Letters
Pub Type
Journals

Keywords

curie-weiss temperature, defects, ferroelectrics, strain

Citation

Balzar, D. (2008), Defect-Related Lattice Strain and the Transition Temperature in Ferroelectric Thin Films, Applied Physics Letters (Accessed April 26, 2024)

Created October 16, 2008