Balzar, D.
(2008),
Defect-Related Lattice Strain and the Transition Temperature in Ferroelectric Thin Films, Applied Physics Letters
(Accessed July 26, 2024)
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Defect-Related Lattice Strain and the Transition Temperature in Ferroelectric Thin Films
Published
Author(s)
Abstract
We propose an extension to the phenomenological thermodynamic Landau-Ginzburg-Devonshire theory to include the contribution of inhomogeneous strains caused by lattice defects to the Gibbs free energy. The model yields correction terms for dielectric and ferroelectric quantities as a function of both elastic misfit strain and defect-related strain that can be measured by x-ray diffraction techniques. We compare the correction in Curie-Weiss temperature due to elastic and inhomogeneous strain in pristine, W and Mn 1 % doped Ba0.6Sr0.4TiO3 thin films grown on the LaAlO3 substrate. If the contribution of inhomogeneous strain is included, the agreement with measurements markedly improves.Citation
Applied Physics Letters
Pub Type
Journals
Keywords
curie-weiss temperature, defects, ferroelectrics, strain
Citation
Issues
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Created October 16, 2008