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Current-induced switching in a single exchange-biased ferromagnetic layer

Published

Author(s)

Tingyong Chen, Yi Ji, C Chien, Mark D. Stiles

Abstract

We demonstrate current-induced switching effects in a single exchanged-biased ferromagnetic layer. A nanodomain can be switched within the ferromagnetic layer by a spin polarized current injected through a point contact. The high resistance of the hysteretic switching is due to formation of a domain wall between the nanodomain and the rest of the layer. The switching behavior observed in a single layer is a new type of spin-transfer torque effect which is the inverse effect of domain wall magnetoresistance. At room temperature, non-hysteretic switching behavior with a broad switching current density range is observed.
Citation
Journal of Applied Physics
Volume
97
Issue
10

Citation

Chen, T. , Ji, Y. , Chien, C. and Stiles, M. (2005), Current-induced switching in a single exchange-biased ferromagnetic layer, Journal of Applied Physics (Accessed July 24, 2024)

Issues

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Created May 14, 2005, Updated October 12, 2021