Correlation Between Microstructure, Electronic Properties and Ficker Noise in Organic Thin Film Transistors

Published

March 31, 2008

Author(s)

Oana Jurchescu, Behrang H. Hamadani, Hao Xiong, Sungkyu Park, Sankar Subramanian, Neil M. Zimmerman, John E. Anthony, Thomas Jackson, David J. Gundlach

Abstract

We report on observations of a direct correlation between the microstructure of the organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed 5,11-bis(triethylsilylethynyl)anthradithiophene thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance, and gives unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. Furthermore, we demonstrate that the 1/f flicker noise is sensitive to structural changes in the transistor channel and can be a diagnostic tool for the quality of the devices.

Citation

Applied Physics Letters

Volume

92

Pub Type

Journals

Download Paper

https://doi.org/10.1063/1.2903508

Keywords

Flicker Noise, Microstructure, Mobility, Organic, Thin Film Transistor

Citation

Jurchescu, O. , Hamadani, B. , Xiong, H. , Park, S. , Subramanian, S. , Zimmerman, N. , Anthony, J. , Jackson, T. and Gundlach, D. (2008), Correlation Between Microstructure, Electronic Properties and Ficker Noise in Organic Thin Film Transistors, Applied Physics Letters, [online], https://doi.org/10.1063/1.2903508 (Accessed December 13, 2024)