Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

Published

January 24, 2018

Author(s)

W Jaskolski, M. Pelc, Garnett W. Bryant, Leonor Chico, A Ayuela

Abstract

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage value. We also show how these bilayer gapless states arise from bands of single layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators.

Citation

2D Materials

Volume

5

Issue

2

Pub Type

Journals

Download Paper

https://doi.org/10.1088/2053-1583/aaa490

Local Download

Keywords

grapheme, bilayer, domain walls, topological states, valley mixing

Citation

Jaskolski, W. , Pelc, M. , Bryant, G. , Chico, L. and Ayuela, A. (2018), Controlling the layer localization of gapless states in bilayer graphene with a gate voltage, 2D Materials, [online], https://doi.org/10.1088/2053-1583/aaa490, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=923858 (Accessed April 24, 2024)