Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Contactless Excitation of Acoustic Resonance in Thin Wafers

Published

Author(s)

Gan Zhai, Yizhou Xin, Cameron Kopas, Ella Lachman, Mark Field, Josh Y Mutus, Katarina Cicak, Joe Aumentado, Zuhawn Sung, William Halperin

Abstract

Contactless excitation and detection of high harmonic acoustic overtones in a thin single crystal are described using radio frequency spectroscopy techniques. Single crystal [001] silicon wafer samples were investigated, one side covered with a Nb thin film, the common starting point for fabrication of quantum devices. The coupling between electromagnetic signals and mechanical oscillation is achieved from the Lorentz force generated by an external magnetic field. This method is suitable for any sample with a metallic surface or covered with a thin metal film. High resolution measurements of the temperature dependence of the sound velocity and elastic constants of silicon are reported and compared with previous work.
Citation
Applied Physics Letters

Citation

Zhai, G. , Xin, Y. , Kopas, C. , Lachman, E. , Field, M. , Mutus, J. , Cicak, K. , Aumentado, J. , Sung, Z. and Halperin, W. (2022), Contactless Excitation of Acoustic Resonance in Thin Wafers, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=935309 (Accessed October 12, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 4, 2022, Updated January 23, 2024