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Comparison of Measured Optical Image Profiles of Silicon Lines with Two Different Theoretical Models

Published

Author(s)

Richard M. Silver, Ravikiran Attota, Michael T. Stocker, Jay S. Jun, Egon Marx, Robert D. Larrabee, B Russo, M P. Davidson

Abstract

In this paper we describe a new method for the separation of too-induced measurement errors and sample-induced measurement errors. We apply the method to standard overlay target configurations. This method is used to separate the effects of the tool and sample errors in the measured optical intensity profiles and to obtain the best estimates of the correct intensity profile for a given sample geometry. This most accurate profile is then compared to calculated profiles from two different theoretical models. We explain the modeling in some detail when it has not been previously published.
Proceedings Title
Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography XVI, Daniel J. C. Herr, Editor
Volume
4689
Conference Dates
March 3-7, 2002
Conference Location
Santa Clara, CA
Conference Title
Overlay and Registrating Metrology II

Keywords

overlay target, sample-induced measurement errors, tool and sample errors, tool-induced measurement errors

Citation

Silver, R. , Attota, R. , Stocker, M. , Jun, J. , Marx, E. , Larrabee, R. , Russo, B. and Davidson, M. (2002), Comparison of Measured Optical Image Profiles of Silicon Lines with Two Different Theoretical Models, Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography XVI, Daniel J. C. Herr, Editor, Santa Clara, CA (Accessed April 22, 2024)
Created July 1, 2002, Updated February 19, 2017