Co on Stepped Cu(100) Surfaces: A Comparison of Experimental Data With Monte Carlo Growth Simulations

Published

May 1, 1998

Author(s)

S T. Coyle, M Scheinfein, J L. Blue

Abstract

Monte Carlo simulations of the growth of Co/Cu(100) in the presence of steps, terraces, and kinks were performed. The beginning stages of Co growth enhance the roughening of step edges. Interdiffusion increases with increasing temperature and decreasing growth rate. Varying the step orientation from <100> to <110> produced a steady decrease in interdiffusion. The lateral width of the interdiffused region in steps (10%-90% concentration) is [approximately]0.7-1.5 nm. Decreasing the Co-Cu binding energy produced an increase in the frequency of double-height islands and step edge decoration. A value of [approximately]0.21 eV/Nearest Neighbor bond produced step edge decoration indicative of a Schwoebel barrier with very few double-height islands. Simulation results were compared to growth results obtained via nanometer resolution ultrahigh vacuum scanning electron microscopy. Island statistics compare favorably with growth results. Experimentally observed large etching features at steps were not well reproduced by the model, suggesting an exchange mechanism may be important.

Citation

Journal of Vacuum Science and Technology

Volume

16

Issue

No. 3

Pub Type

Journals

Keywords

activation energy, cobalt on copper, crystal growth, defects, step edges

Citation

Coyle, S. , Scheinfein, M. and Blue, J. (1998), Co on Stepped Cu(100) Surfaces: A Comparison of Experimental Data With Monte Carlo Growth Simulations, Journal of Vacuum Science and Technology (Accessed September 18, 2024)