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Co Layer Thickness Dependence of Exchange Biasing For IrMn/Co and FeMn/Co



K A. Seu, H Huang, J F. Lesoine, H D. Showman, William F. Egelhoff Jr., L Gan, A C. Reilly


We present a high resolution study of the ferromagnetic layer thickness dependence of exchange bias field (HEB) and coercivity (HC) in IrMn/Co and FeMn/Co bilayers using the magneto-optical Kerr effect. Samples are sputtered wedges on silicon with Co thicknesses ranging from 1 nm to 17 nm. The IrMn/Co (with exchange bias interface energy of ∝ 0.14 mJ/m2 shows square loops, a smooth increase in HEB with inverse thickness, and a complicated behavior for coercivity, perhaps due to competition with thickness dependent coercive mechanisms. The FeMn/Co (with exchange bias interface energy of ∝ 0.059 mJ/m2 shows more rounded loops, a plateau of HEB with decreasing thickness, and a smooth increase in coercivity with inverse thickness.
Journal of Applied Physics
No. 10


antiferromagnetism, Co, exchange bias, IrMn, pinning


Seu, K. , Huang, H. , Lesoine, J. , Showman, H. , Egelhoff Jr., W. , Gan, L. and Reilly, A. (2003), Co Layer Thickness Dependence of Exchange Biasing For IrMn/Co and FeMn/Co, Journal of Applied Physics (Accessed April 20, 2024)
Created April 30, 2003, Updated October 12, 2021