NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Chip-Scale Atomic Frequency References: Fabrication and Performance
Published
Author(s)
John Kitching, Svenja A. Knappe, Li-Anne Liew, John M. Moreland, Hugh Robinson, Peter D. Schwindt, V Shah, V Gerginov, Leo W. Hollberg
Abstract
The physics package for a chip-scale atomic frequency reference was constructed and tested. The device has a total volume of 9.5 mm3, dissipates 75 mW of electrical power at an ambient temperature of 45 °C and has a short-term fractional frequency instability of 2.4×10-10/√υ. Advanced cell fabrication techniques indicate a long-term instability near 1-^-11^ may be feasible.
Kitching, J.
, Knappe, S.
, Liew, L.
, Moreland, J.
, Robinson, H.
, Schwindt, P.
, Shah, V.
, Gerginov, V.
and Hollberg, L.
(2005),
Chip-Scale Atomic Frequency References: Fabrication and Performance, 19th European Frequency and Time Forum, Besancon, 1, FR
(Accessed October 2, 2025)