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Charge state dependent energy deposition by ion impacts



Russell E. Lake, Joshua M. Pomeroy, Holger Grube, C E. Sosolik


We report on a measurement of craters in thin dielectric films formed by XeQ+ (26 Q 44) projectiles. Tunnel junction devices with ion-irradiated barriers were used to amplify the effect of charge-dependent cratering through the exponential dependence of tunneling conductance on barrier thickness. Electrical conductance of a crater c(Q) increased by four orders of magnitude (7:9 10􀀀4 S to 6.1 S) as Q increased, corresponding to crater depths ranging from 2 °A to 11 A° . By employing a heated spike model, we determine that the total energy required to produce the craters spans from 8 keV to 25 keV over the investigated charge states. Considering energy from pre-equilibrium nuclear and electronic stopping as well as neutralization, we find that at least 27 2% of available projectile neutralization energy is deposited into the thin film during impact.
Physical Review Letters


Lake, R. , Pomeroy, J. , Grube, H. and Sosolik, C. (2011), Charge state dependent energy deposition by ion impacts, Physical Review Letters (Accessed April 17, 2024)
Created August 5, 2011, Updated February 19, 2017