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Charge Offset Stability in Tunable-Barrier Si SET Devices



Neil M. Zimmerman, Brian Simonds, Mikio Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa


The problem of charge offset drift in single-electron tunneling devices, based on the Coulomb blockade, can preclude their useful application in metrology and integrated devices. We demonstrate that in tunable-barrier Si-based SET transistors there is excellent stability, with a drift that is in general less than 0.01 e. We also demonstrate that these devices exhibit some unwanted sensitivity to external perturbations including temperature excursions. Finally, we show that these devices can be ?trained? to minimize their sensitivity to abrupt voltage changes.
Applied Physics Letters


charge offset, Coulomb blockade, tunable-barrier


Zimmerman, N. , Simonds, B. , Fujiwara, M. , Ono, Y. , Takahashi, Y. and Inokawa, H. (2007), Charge Offset Stability in Tunable-Barrier Si SET Devices, Applied Physics Letters, [online], (Accessed April 14, 2024)
Created January 16, 2007, Updated October 12, 2021