Charge Offset Stability in Tunable-Barrier Si SET Devices
Neil M. Zimmerman, Brian J. Simonds, Mikio Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa
The problem of charge offset drift in single-electron tunneling devices, based on the Coulomb blockade, can preclude their useful application in metrology and integrated devices. We demonstrate that in tunable-barrier Si-based SET transistors there is excellent stability, with a drift that is in general less than 0.01 e. We also demonstrate that these devices exhibit some unwanted sensitivity to external perturbations including temperature excursions. Finally, we show that these devices can be ?trained? to minimize their sensitivity to abrupt voltage changes.