Characterizing CDSEM Metrology of 193 nm Resists at Ultra Low Voltage
N. Sullivan, M Mastovich, Ronald G. Dixson, P Knutruda, B Bunday, P Febrea, R Brandoma
Resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193 nm resists. Total uncertainties, which approach 10 nm, can be realized through the combination of across wafer variation of line slimming and uncertainty in the initial conditions of the measurement feature with respect to the measurement result. This research examines the expanded uncertainty which results from the using industry accepted offset techniques to account for resist slimming and control of 193 nm resist CDs. Data will demonstrate that CDs experience the largest slimming during the initial measurement pass and that subsequent measurements are not indicative fo the true value of line slimming. This work also reports on experiments to study the effect of ultra low landing energies down to 100 eV which are designed to minimize the large uncertainties introduced by the line slimming effect.
September 22-24, 2002
San Diego, CA, USA
ARCH Interface Conference
193 resist shrinkage, AFM, CD, linewidth, metrology, SEM
, Mastovich, M.
, Dixson, R.
, Knutruda, P.
, Bunday, B.
, Febrea, P.
and Brandoma, R.
Characterizing CDSEM Metrology of 193 nm Resists at Ultra Low Voltage, ARCH Interface Conference, San Diego, CA, USA
(Accessed December 9, 2023)