Characterizing CDSEM Metrology of 193 nm Resists at Ultra Low Voltage

Published

January 1, 2002

Author(s)

N. Sullivan, M Mastovich, Ronald G. Dixson, P Knutruda, B Bunday, P Febrea, R Brandoma

Abstract

Resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193 nm resists.  Total uncertainties, which approach 10 nm, can be realized through the combination of across wafer variation of line slimming and uncertainty in the initial conditions of the measurement feature with respect to the measurement result.  This research examines the expanded uncertainty which results from the using industry accepted offset techniques to account for resist slimming and control of 193 nm resist CDs.  Data will demonstrate that CDs experience the largest slimming during the initial measurement pass and that subsequent measurements are not indicative fo the true value of line slimming.  This work also reports on experiments to study the effect of ultra low landing energies   down to 100 eV which are designed to minimize the large uncertainties introduced by the line slimming effect.

Conference Dates

September 22-24, 2002

Conference Location

San Diego, CA, USA

Conference Title

ARCH Interface Conference

Pub Type

Conferences

Keywords

193 resist shrinkage, AFM, CD, linewidth, metrology, SEM

Citation

Sullivan, N. , Mastovich, M. , Dixson, R. , Knutruda, P. , Bunday, B. , Febrea, P. and Brandoma, R. (2002), Characterizing CDSEM Metrology of 193 nm Resists at Ultra Low Voltage, ARCH Interface Conference, San Diego, CA, USA (Accessed October 15, 2025)