Characterization of UV-Induced Radiation Damage to Si-based Photodiodes
Keith R. Lykke, Ping-Shine Shaw, J L. Dehmer, R Gupta
We have made direct measurements of the internal quantum efficiency and the reflectivity of UV-damaged silicon photodiodes in the spectral range of 120 nm to 320 nm. The above qualities, coupled with absolute spectral responsivities, give unique information leading to the identification of the mechanisms responsible for the degradation of performance of the silicon photodiodes in the ultraviolet. The measurements were made using synchrotron radiation from the National Institute of Standards and Technology (NIST) synchrotron ultraviolet radiation facility (SURF II) and an absolute cryogenic radiometer s a primary standard detector.