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Characterization of Magnetic Nanostructures for ST-RAM Applications By Use Of Macro- and Micro-Scale Ferromagnetic Resonance

Published

Author(s)

Thomas J. Silva, Hans T. Nembach, Justin M. Shaw

Abstract

Spin-torque memory is under consideration for high-speed, scalable, non-volatile memory applications. The storage medium is a magnetic layer with an intrinsic anisotropy that favors orientation of the magnetization in either of two directions perpendicular to the film plane. Read-out of the storage layer is based on spin-dependent tunneling from an adjacent magnetic reference layer, while the direct transfer of angular momentum in the form of electron spin is the driving mechanism for switching the magnetization in the storage layer.
Citation
Frontiers of Charecterization and Metrology for Nanoelectronics 2015
Publisher Info
Pan Stanford Publishing Pte. Ltd., Dresden , -1

Keywords

magnetic nanostructures, ST-RAM applications, macro-scale, micro-scale, ferromagnetic resonance, magnetic layer, intrinsic anisotropy, perpendicular, film plane, spin-dependent tunneling, electron spin

Citation

Silva, T. , Nembach, H. and Shaw, J. (2015), Characterization of Magnetic Nanostructures for ST-RAM Applications By Use Of Macro- and Micro-Scale Ferromagnetic Resonance, Pan Stanford Publishing Pte. Ltd., Dresden , -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917948 (Accessed May 21, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created April 13, 2015, Updated August 6, 2020