Characterization of 2.5 Inch Diameter Bulk GaN Grown from Melt-Solution
V Soukhoveev, V Ivantsov, Y Melnik, Albert Davydov, Denis Tsvetkov, K Tsvetkova, I Nikitina, A Zubrilov, A Lavrentiev, Vladimir A. Dmitriev
Crystal growth from a melt or melt-solution is a widely accepted technique for industrial-scale production of important semiconductor materials. Recently we have demonstrated 50 mm diameter GaN crystals grown by melt-solution technique . The crystals were grown at ambient pressure not exceeding 2 atm at growth temperature of about 900 degrees C. This paper is providing information on material properties of these GaN crystals.
Physica Status Solidi A-Applications and Materials Science
crystal growth, gallium nitride, semiconductors
, Ivantsov, V.
, Melnik, Y.
, Davydov, A.
, Tsvetkov, D.
, Tsvetkova, K.
, Nikitina, I.
, Zubrilov, A.
, Lavrentiev, A.
and Dmitriev, V.
Characterization of 2.5 Inch Diameter Bulk GaN Grown from Melt-Solution, Physica Status Solidi A-Applications and Materials Science
(Accessed November 28, 2023)