Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Characterization of 2.5 Inch Diameter Bulk GaN Grown from Melt-Solution

Published

Author(s)

V Soukhoveev, V Ivantsov, Y Melnik, Albert Davydov, Denis Tsvetkov, K Tsvetkova, I Nikitina, A Zubrilov, A Lavrentiev, Vladimir A. Dmitriev

Abstract

Crystal growth from a melt or melt-solution is a widely accepted technique for industrial-scale production of important semiconductor materials. Recently we have demonstrated 50 mm diameter GaN crystals grown by melt-solution technique [1]. The crystals were grown at ambient pressure not exceeding 2 atm at growth temperature of about 900 degrees C. This paper is providing information on material properties of these GaN crystals.
Citation
Physica Status Solidi A-Applications and Materials Science
Volume
188
Issue
No. 1

Keywords

crystal growth, gallium nitride, semiconductors

Citation

Soukhoveev, V. , Ivantsov, V. , Melnik, Y. , Davydov, A. , Tsvetkov, D. , Tsvetkova, K. , Nikitina, I. , Zubrilov, A. , Lavrentiev, A. and Dmitriev, V. (2001), Characterization of 2.5 Inch Diameter Bulk GaN Grown from Melt-Solution, Physica Status Solidi A-Applications and Materials Science (Accessed May 28, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 31, 2001, Updated October 12, 2021