Chapter 4. On-wafer measurements of RF nanoelectronic devices

Published

September 15, 2017

Author(s)

Thomas M. Wallis, Pavel Kabos

Abstract

The preceding chapters have introduced the core concepts and techniques of microwave measurements, in general, and techniques for microwave measurements of extreme impedance devices, in particular. Here, we narrow the focus further to on-wafer, microwave measurements of RF nanoelectronic devices. In this chapter, the term “nanoelectronic devices” refers to electronic, charge-based devices that incorporate nanoscale elements or nanomaterials, such as carbon nanotubes, semiconducting nanowires, or graphene. For now, discussion will be further limited to characterization of passive devices (Characterization of active devices will be discussed in Chapter 10). In a device development environment, a priori knowledge of the electronic properties of such nanoscale building blocks may be limited. Further, physical properties of nanoscale material systems may vary strongly from building block to building block and consequently, performance may vary strongly from device to device. As a result, fundamental device properties such as device impedance or cutoff frequency may be unknown and broadband measurements will be required to determine them.

Citation

Measurement Techniques for Radio Frequency Nanoelectronics

Publisher Info

Cambridge University Press, Cambridge, -1

Pub Type

Books

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Keywords

nanoelectronics, microwave measurements, passive devices, nanomaterials

Citation

Wallis, T. and Kabos, P. (2017), Chapter 4. On-wafer measurements of RF nanoelectronic devices, Cambridge University Press, Cambridge, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=921946 (Accessed April 26, 2024)