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Catalyst-free GaN nanowire growth and optoelectronic characterization



Kristine A. Bertness, Norman A. Sanford, John B. Schlager


We discuss the present state-of-the-art concerning the growth mechanism, optical luminescence and electrical properties for GaN nanowires grown with catalyst-free molecular beam epitaxy. These nanowires are essentially defect-free and display long photoluminescence lifetimes and carrier mobilities relative to epitaxially grown GaN films. The exclusion of crystalline defects comes from the ease with which strain-relieving dislocations can reach the sidewalls and terminate. The growth mechanism is based on variations in Ga sticking coefficients and surface energies of the sidewall planes and end facet planes. With control of the nucleation process through selective epitaxy on patterned substrates, a high degree of diameter, length and position control can be achieved. Common difficulties with interpretation of optical and electrical data with regard to internal quantum efficiency and mobility are also addressed.
Proceedings Title
SPIE NanoScience and Engineering, San Diego, CA United States
Conference Dates
August 1-5, 2010
Conference Location
San Diego, CA


GaN nanowires, growth mechanism, molecular beam epitaxy, photoluminescence


Bertness, K. , Sanford, N. and Schlager, J. (2011), Catalyst-free GaN nanowire growth and optoelectronic characterization, SPIE NanoScience and Engineering, San Diego, CA United States, San Diego, CA, [online], (Accessed June 24, 2024)


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Created August 19, 2011, Updated February 19, 2017