Vaithyanathan, V.
, Lettieri, J.
, Tian, W.
, Kochhar, A.
, Ma, H.
, Sharan, A.
, Vasudevarao, A.
, Aust, J.
, Li, Y.
, Chen, L.
, Zschack, P.
and Woicik, J.
(2021),
c-Axis Oriented Epitaxial BaTiO<sub>3</sub> Films on (001) Si, Journal of Applied Physics
(Accessed October 13, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
c-Axis Oriented Epitaxial BaTiO3 Films on (001) Si
Published
Author(s)
V Vaithyanathan, J Lettieri, W Tian, A Kochhar, H Ma, A Sharan, A Vasudevarao, J. A. Aust, Y Li, Long-Qing Chen, P Zschack,
Abstract
c-axis oriented epitaxial films of the ferroelectric BaTiO3 have been grown on (001) Si by reactive molecular-beam epitaxy (MBE). The orientation relationship between the film and substrate is (001) BaTiO3 // (001) Si and [100] BaTiO3 // [110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO3 and silicon is overcome by introducing a buffer layer of BaxSr1-xTiO3 between the BaTiO3 film and silicon substrate. The rocking curve widths of the BaTiO3 films are as narrow as 0.4 degree. X-ray diffraction (XRD) and second harmonic generation (SHG) experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO3 film. Piezo-repsonse atomic force microscopy (AFM) is used to write ferroelectric domains with a spatial resolution of approximately 100 nm, corroborating the orientation of the ferrolectric film.Citation
Journal of Applied Physics
Pub Type
Journals
Keywords
BaTiO3, c-axis oriented, epitaxial, ferroelectric films, out-of-plane
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created October 12, 2021