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c-Axis Oriented Epitaxial BaTiO3 Films on (001) Si

Published

Author(s)

V Vaithyanathan, J Lettieri, W Tian, A Kochhar, H Ma, A Sharan, A Vasudevarao, J. A. Aust, Y Li, Long-Qing Chen, P Zschack, Joseph Woicik

Abstract

c-axis oriented epitaxial films of the ferroelectric BaTiO3 have been grown on (001) Si by reactive molecular-beam epitaxy (MBE). The orientation relationship between the film and substrate is (001) BaTiO3 // (001) Si and [100] BaTiO3 // [110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO3 and silicon is overcome by introducing a buffer layer of BaxSr1-xTiO3 between the BaTiO3 film and silicon substrate. The rocking curve widths of the BaTiO3 films are as narrow as 0.4 degree. X-ray diffraction (XRD) and second harmonic generation (SHG) experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO3 film. Piezo-repsonse atomic force microscopy (AFM) is used to write ferroelectric domains with a spatial resolution of approximately 100 nm, corroborating the orientation of the ferrolectric film.
Citation
Journal of Applied Physics

Keywords

BaTiO3, c-axis oriented, epitaxial, ferroelectric films, out-of-plane

Citation

Vaithyanathan, V. , Lettieri, J. , Tian, W. , Kochhar, A. , Ma, H. , Sharan, A. , Vasudevarao, A. , Aust, J. , Li, Y. , Chen, L. , Zschack, P. and Woicik, J. (2021), c-Axis Oriented Epitaxial BaTiO<sub>3</sub> Films on (001) Si, Journal of Applied Physics (Accessed August 18, 2022)
Created October 12, 2021