Jaskolski, W.
, Oszwaldowski, R.
and Bryant, G.
(2001),
On Boundary Condition-Induced States in Low-Dimensional Semiconductor Structures, Vacuum
(Accessed April 25, 2024)
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On Boundary Condition-Induced States in Low-Dimensional Semiconductor Structures
Published
Author(s)
W Jaskolski, R -. Oszwaldowski,
Abstract
We examine different solutions of multi-band k.p Hamiltonians. We refer mainly to the intrinsic surface states, with energies in the forbidden energy gap, that were proposed recently for bare and capped nanocrystals. We review analytical and numerical results for different Hamiltonians and demonstrate that spurious solutions occur both for quantum dots and quantum wells. By showing peculiar characteristics of the proposed gap states, we argue that they are spurious solutions appearing in multi-band formulations due to infinite potential barrier imposed at the nanocrystal surface. We propose that these states are not physical and should be excluded from the theoretical interpretation of experimental data.Citation
Vacuum
Volume
63
Issue
No. 1-2
Pub Type
Journals
Keywords
electronic structure, nanocrystal, quantum dot semiconductor, surface state
Citation
Created July 1, 2001, Updated February 17, 2017