White, G.
, Paul, A.
, Bertness, K.
and Roshko, A.
(2003),
Biaxial Stress Dependence of the GaAs-Like and AlAs-Like Raman Lines in Al<sub>x</sub>Ga<sub>1-x</sub>As, Journal of Vacuum Science and Technology
(Accessed April 25, 2024)
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Biaxial Stress Dependence of the GaAs-Like and AlAs-Like Raman Lines in AlxGa1-xAs
Published
Author(s)
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Abstract
Raman peak shifts of AlxGa1-xAs have been measured as a function of both x and applied biaxial stress in a backscatter geometry. Within the precision of the Raman measurements, the stress-induced peak shifts of the Raman singlet GaAs-like and AlAs-like Raman peaks were insensitive to x for 0.8 > x > 0. However, the observed stress-induced shift of the AlAs-like peak was 50% greater than that for the GaAs-like peak.Citation
Journal of Vacuum Science and Technology
Pub Type
Journals
Keywords
Raman peak
Citation
Created January 1, 2003, Updated February 19, 2017