Biaxial Stress Dependence of the GaAs-Like and AlAs-Like Raman Lines in AlxGa1-xAs
Grady S. White, Albert J. Paul, Kristine A. Bertness, Alexana Roshko
Raman peak shifts of AlxGa1-xAs have been measured as a function of both x and applied biaxial stress in a backscatter geometry. Within the precision of the Raman measurements, the stress-induced peak shifts of the Raman singlet GaAs-like and AlAs-like Raman peaks were insensitive to x for 0.8 > x > 0. However, the observed stress-induced shift of the AlAs-like peak was 50% greater than that for the GaAs-like peak.
, Paul, A.
, Bertness, K.
and Roshko, A.
Biaxial Stress Dependence of the GaAs-Like and AlAs-Like Raman Lines in Al<sub>x</sub>Ga<sub>1-x</sub>As, Journal of Vacuum Science and Technology
(Accessed June 8, 2023)