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Biaxial Stress Dependence of the GaAs-Like and AlAs-Like Raman Lines in AlxGa1-xAs

Published

Author(s)

Grady S. White, Albert J. Paul, Kristine A. Bertness, Alexana Roshko

Abstract

Raman peak shifts of AlxGa1-xAs have been measured as a function of both x and applied biaxial stress in a backscatter geometry. Within the precision of the Raman measurements, the stress-induced peak shifts of the Raman singlet GaAs-like and AlAs-like Raman peaks were insensitive to x for 0.8 > x > 0. However, the observed stress-induced shift of the AlAs-like peak was 50% greater than that for the GaAs-like peak.
Citation
Journal of Vacuum Science and Technology

Keywords

Raman peak

Citation

White, G. , Paul, A. , Bertness, K. and Roshko, A. (2003), Biaxial Stress Dependence of the GaAs-Like and AlAs-Like Raman Lines in Al<sub>x</sub>Ga<sub>1-x</sub>As, Journal of Vacuum Science and Technology (Accessed April 22, 2024)
Created January 1, 2003, Updated February 19, 2017