Biaxial Stress Dependence of AlxGa1-xAs Photoluminescence

Published

January 13, 2007

Author(s)

Grady S. White, Albert J. Paul, Kristine A. Bertness, Lawrence H. Robins

Abstract

A study was conducted of the room temperature photoluminescence behavior of AlxGa1-xAs as a function of tensile, equi-biaxial stress for x = 0, 0.198, 0.36, 0.498, and 0.809. The composition range included both the direct and the indirect band gap regions. Spectra derived from direct band gap transitions showed the expected single, asymmetric, composition-dependent peaks. Under stress, the peak positions shifted down in energy, but the magnitude of the shift was inversely related to the Al content. In contrast, photoluminescence spectra for each of the two compositions in the indirect transition region contained both a peak attributed to the indirect transition and several peaks identified as phonon replicas. The stress dependence of the peaks attributed to the indirect transition showed similar composition dependence to that for the direct transitions, but the magnitudes of the peak shifts were much smaller.

Citation

Journal of Applied Physics

Pub Type

Journals

Keywords

AlGaAs, biaxial stress, composition, direct transition, indirect transition, phonon replica, photoluminescence

Citation

White, G. , Paul, A. , Bertness, K. and Robins, L. (2007), Biaxial Stress Dependence of AlxGa_1-xAs Photoluminescence, Journal of Applied Physics (Accessed May 2, 2024)