Woicik, J.
, Quackenbush, N.
, Weiland, C.
, , E.
, Rumaiz, A.
, Brumbach, M.
and Ablett, J.
(2021),
Betraying excitonic processes and chemical bonding in MoS2 by x-ray-absorption near-edge structure and resonant-Auger electron emission, Physical Review B, [online], https://dx.doi.org/10.1103/PhysRevB.98.115149, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=926252
(Accessed October 12, 2025)
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Betraying excitonic processes and chemical bonding in MoS2 by x-ray-absorption near-edge structure and resonant-Auger electron emission
Published
Author(s)
, , , , Abdul K. Rumaiz, Michael T. Brumbach, James M. Ablett
Abstract
Electron core-hole processes at absorption edges sport several signatures, primarily in the form of bound states and/or excitonic enhancement. Through analysis of the resonant-Raman Auger effect for the 2-dimensional transition-metal dichalcogenide MoS2, we demonstrate that these effects can have significant manifestations at the S 1s x-ray edge. We characterize two asymmetric excitonically enhanced edges: one at the fundamental band edge and one several electron volts above it following a second band gap that lies entirely within the unoccupied states, with the latter revealing an anomalous post-collision interaction effect. Our interpretation is supported by comparison of the absorption spectra with electronic structure calculations obtained using an ab initio solution of the Bethe-Salpeter equation, which accurately accounts for the electron-core-hole interaction.Citation
Physical Review B
Volume
98
Issue
11
Pub Type
Journals
Download Paper
Keywords
MOS2, Sulfur 1s, exciton
Citation
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Created March 10, 2021, Updated April 6, 2021