Barium Strontium Titaanate Thin Film Analysis

Published

October 12, 2021

Author(s)

T Remmel, R Deslattes, S Fujimura, H Honma, H Kobayashi, H Kohno, S M. Owens, J Pedulla, M Schulberg

Abstract

Barium Strontium Titanate (BST) is under consideration as a high dielectric constant material for a number of semiconductor applications. Because of its very large dielectric constant, BST is seen as an enabling material that will allow the continual shrinking of integrated circuits and progression along the path of Moore's Law. The electrical behavior of BST is extremely dependent upon its material properties, including its stoichiometry, crystal structure and thickness. Therefore, successful implementation of BST into integrated circuits will require a thorough understanding of, and the ability to control, its material properties.Several x-ray methods are ideally suited for characterization and metrology of the material properties of BST: XRF for stoichiometry, XRD for structure, and XRR for film thickness. This paper focuses primarily on the application of the latter two methods toward characterization of BST films. Analysis of BST films deposited using spin-on, sputtering and CVD methods are included. In addition, part of the paper covers the results of a multi-laboratory **round robin** comparing the application of XRF and XRR techniques on the same set of BST films.

Citation

Proceedings of the 52nd Annual Denver X-Ray Conference

Pub Type

Journals

Keywords

barium strontium titanate, BST, dielectric films, high-k dielectrics, x-ray fluorescence, x-ray reflectivity, XRR, XRX

Citation

Remmel, T. , Deslattes, R. , Fujimura, S. , Honma, H. , Kobayashi, H. , Kohno, H. , Owens, S. , Pedulla, J. and Schulberg, M. (2021), Barium Strontium Titaanate Thin Film Analysis, Proceedings of the 52nd Annual Denver X-Ray Conference (Accessed October 8, 2024)