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Asymmetric coupled CMOS lines-an experimental study

Published

Author(s)

Uwe Arz, Dylan F. Williams, Dave K. Walker, Hartmut Grabinski

Abstract

Abstract: This paper investigates the properties of asymmetric coupled lines built in a 0.25- m CMOS technology over the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port scattering-parameter measurements agree well with numerical predictions. We also demonstrate by measurement and calculation that the two fundamental modes of the coupled-line system share significant cross power. To our knowledge, this is the first complete experimental characterization of asymmetric coupled lines on silicon ever reported.
Citation
IEEE Transactions on Microwave Theory and Techniques
Volume
48
Issue
12

Citation

Arz, U. , Williams, D. , Walker, D. and Grabinski, H. (2000), Asymmetric coupled CMOS lines-an experimental study, IEEE Transactions on Microwave Theory and Techniques, [online], https://doi.org/10.1109/22.898991 (Accessed April 16, 2024)
Created December 1, 2000, Updated November 10, 2018