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Assessing Radiation Hardness of Silicon Photonic Sensors.



Zeeshan Ahmed, Lonnie T. Cumberland, Ronald E. Tosh, Nikolai N. Klimov, Ileana M. Pazos, Ryan P. Fitzgerald


In recent years silicon photonic platforms have undergone rapid maturation enabling not only optical communication but complex scientific experiments ranging from sensors applications to fundamental physics inquiries. There is con-siderable interest in deploying photonics-based communication and science instruments in harsh environments such as outer space, where radiation damage is a significant concern. In this study, we have examined the impact of - radiation up to 1 MGy dose on silicon photonic devices. We do not find any systematic impact of radiation on passivated devices, indicating the extreme durability of passivated silicon devices under harsh conditions
ACS Photonics


nanophotonics, thermometry, raidation, hardness, e-grey


Ahmed, Z. , Cumberland, L. , Tosh, R. , Klimov, N. , Pazos, I. and Fitzgerald, R. (2018), Assessing Radiation Hardness of Silicon Photonic Sensors., ACS Photonics, [online], (Accessed May 24, 2024)


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Created August 13, 2018, Updated November 10, 2018