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A general model of chemical mechanical polishing (CMP) has been derived which shows the dependence of the polishing rate on the concentration of chemicals and abrasives in the slurry. This paper applies the model to tungsten CMP and describes the chemistry of tungsten CMP in some detail.
Citation
Journal of Electrical Chemical Science
Pub Type
Journals
Keywords
CMP, model, Tungsten
Citation
Paul, E.
(2008),
Application of a CMP Model to Tungsten CMP, Journal of Electrical Chemical Science
(Accessed October 9, 2024)