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Application of a CMP Model to Tungsten CMP

Published

Author(s)

E W. Paul

Abstract

A general model of chemical mechanical polishing (CMP) has been derived which shows the dependence of the polishing rate on the concentration of chemicals and abrasives in the slurry. This paper applies the model to tungsten CMP and describes the chemistry of tungsten CMP in some detail.
Citation
Journal of Electrical Chemical Science

Keywords

CMP, model, Tungsten

Citation

Paul, E. (2008), Application of a CMP Model to Tungsten CMP, Journal of Electrical Chemical Science (Accessed July 14, 2024)

Issues

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Created October 16, 2008