Paul, E.
(2008),
Application of a CMP Model to Tungsten CMP, Journal of Electrical Chemical Science
(Accessed December 14, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Application of a CMP Model to Tungsten CMP
Published
Author(s)
Abstract
A general model of chemical mechanical polishing (CMP) has been derived which shows the dependence of the polishing rate on the concentration of chemicals and abrasives in the slurry. This paper applies the model to tungsten CMP and describes the chemistry of tungsten CMP in some detail.Citation
Journal of Electrical Chemical Science
Pub Type
Journals
Keywords
CMP, model, Tungsten
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created October 16, 2008